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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
*Notes:
1. V GS = 0V
0.5
*Notes:
1. V GS = 10V
T J , Junction Temperature [ C ]
T J , Junction Temperature [ C ]
0.8
-100
2. I D = 1mA
-50 0 50 100 150 200
o
0.0
-100
2. I D = 4.5A
-50 0 50 100 150
o
200
Figure 9. Maximum Safe Operating Area
for FCPF9N60N
50
10 μ s
Figure 10. Maximum Safe Operating Area
for FCPF9N60NT
100
10 μ s
10
100 μ s
1ms
10
100 μ s
1
Operation in This Area
is Limited by R DS(on)
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
1ms
10ms
1. T C = 25 C
2. T J = 150 C
1. T C = 25 C
2. T J = 150 C
0.1
0.01
1
*Notes:
o
o
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
0.1
0.01
1
DC
*Notes:
o
o
3. Single Pulse
10 100
V DS , Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current
vs. Case Temperature
10
8
6
4
2
T C , Case Temperature [ C ]
0
25
50 75 100 125
o
150
?2009 Fairchild Semiconductor Corporation
FCP9N60N / FCPF9N60NT Rev. C1
4
www.fairchildsemi.com
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